PART |
Description |
Maker |
TSM160N10LCR |
Low gate charge for fast power switching
|
Taiwan Semiconductor Co...
|
AP4951GM-HF AP4951GM-HF-14 |
Simple Drive Requirement, Low Gate Charge, Fast Switching Performance
|
Advanced Power Electronics Corp. Advanced Power Electron...
|
RM400HV-34S |
CAP CER 22000PF 10% 50V X8R 0805 HIGH SPEED SWITCHING USE INSULATED TYPE Fast Recovery Diode Modules, F Series (for IGBT speed switching)
|
Mitsubishi Electric Sem... Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
SMP1340 SMP1340-001 SMP1340-003 SMP1340-004 SMP134 |
Fast Switching Speed, Low Capacitance Plastic Packaged PIN Diodes Fast Switching Speed Low Capacitance Plastic Packaged PIN Diodes
|
Alpha Industries Inc ALPHA[Alpha Industries]
|
AP2535GEY-HF AP2535GEY-HF-14 |
Capable of 1.8V Gate Drive, Lower Gate Charge Fast Switching Performance
|
Advanced Power Electronics Corp. Advanced Power Electron...
|
GD511 |
SURFACE MOUNT,SWITCHING DIODE The GD511 is designed for ultra high speed switching application, low forward voltage and fast reverse recovery time
|
GTM CORPORATION E-Tech Electronics LTD
|
RM50HG-12S RM50HG-12S01 |
Fast Recovery Diode Modules, F Series (for IGBT speed switching) FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE NON-INSULATED TYPE
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
2SK2504 |
Low on-resistance. Fast switching speed. Wide SOA (safe operating area). Easy to parallel.
|
TY Semiconductor Co., Ltd
|
IRG4PC40FPBF IRG4PC40FPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR INSULATED GATE BIPOLARTRANSISTOR Fast Speed IGBT
|
International Rectifier
|
BUP400D Q67040-A4423-A2 BUP400-D |
IGBT Duopack (IGBT with Antiparallel ... IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) From old datasheet system High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-TSSOP -55 to 125 由于IGBT的反平行二极管(低正向压降高开关速度低尾电流的无闩锁包括快速滑行二极管
|
Siemens Semiconductor G... Infineon Siemens Semiconductor Group SIEMENS AG
|
KDW2503N |
5.5 A, 20 V. RDS(ON) = 0.021 Fast switching speed High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
1N4148S |
Fast Switching Speed For General Purpose Switching Applications High Conductance
|
TY Semiconductor Co., L...
|